The diodes like zener, reference, avalanche and varicap diodes are reverse biased in normal working conditions. As the informative parameter for reliability of these diodes, the low-frequency multiplication noise in p-n junction under breakdown conditions can be used. The units exhibiting the multipeak phenomenon in Sv(1) show considerably higher
correlation with degradation. A detailed analysis shows that the first peak in Sv(I) dependence given in Fig 151 is the consequence of current dependence of dynamic resistance of the p-n junction 1231. The ideal p-n junction has one maxima in Sv(I) dependence of multiplication noise. The second and other maxima are the consequence of built-in defects
which cause the unstable microplasma mechanisms
Dopuna: 29 Mar 2009 22:36
Molim Pomoc oko ovog teksta. treba mi za diplomski ali gdje sam se god obratio niko ne zna kvalitetan prevod.
HVALA
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